Photoelectron spectroscopic study of amorphous GaAsN films

被引：10

作者：

Zanatta, AR ^{[1
]}

Hammer, P

Alvarez, F

机构：

[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560250 Sao Paulo, Brazil

[2] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13038970 Sao Paulo, Brazil

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 16期

关键词：

D O I：

10.1063/1.126299

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous gallium-arsenic-nitrogen (a-GaAsN) thin films were deposited by sputtering a crystalline GaAs target with different mixtures of argon and nitrogen. X-ray photoelectron spectroscopy (XPS) and x-ray excited Auger electron spectroscopy (XAES) were employed to study the Ga and As core levels and the corresponding LMM Auger transitions of films with different N concentrations. Chemical information of these samples was obtained through the analysis of the Auger parameter, which is exempt from problems inherent in the interpretation of XPS and XAES shifts, revealing aspects associated with the composition of the a-GaAsN films. In particular, these experimental results show the preferential bonding of N to Ga atoms in the formation of N-rich amorphous GaAsN films. (C) 2000 American Institute of Physics. [S0003-6951(00)02816-3].

引用

页码：2211 / 2213

页数：3

共 17 条

[1] Auger electron spectroscopy studies of nitridation of the GaAs(001) surface [J].

Aksenov, I ;

Nakada, Y ;

Okumura, H .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (06) :3159-3166

[2] Bowing parameter of the band-gap energy of GaNxAs1-x [J].

Bi, WG ;

Tu, CW .

APPLIED PHYSICS LETTERS, 1997, 70 (12) :1608-1610

[3]

Briggs D., 1990, AUGER XRAY PHOTOELEC, V1

[4] OXYGEN INTERACTION WITH GAAS-SURFACES - XPS-UPS STUDY [J].

BRUNDLE, CR ;

SEYBOLD, D .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1186-1190

[5] Luminescence of as-grown and thermally annealed GaAsN/GaAs [J].

Francoeur, S ;

Sivaraman, G ;

Qiu, Y ;

Nikishin, S ;

Temkin, H .

APPLIED PHYSICS LETTERS, 1998, 72 (15) :1857-1859

[6] PHOTOEMISSION-STUDIES OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS (001) SURFACES EXPOSED TO A NITROGEN PLASMA [J].

GOURRIER, S ;

SMIT, L ;

FRIEDEL, P ;

LARSEN, PK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3993-3997

[7] Pulsed laser deposition of epitaxial GaNxAs1-x on GaAs [J].

Hung, WK ;

Chern, MY ;

Fan, JC ;

Lin, TY ;

Chen, YF .

APPLIED PHYSICS LETTERS, 1999, 74 (26) :3951-3953

[8] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

[9] Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine [J].

Ougazzaden, A ;

LeBellego, Y ;

Rao, EVK ;

Juhel, M ;

Leprince, L ;

Patriarche, G .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2861-2863

[10] Nitrogen-activated transitions, level repulsion, and band gap reduction in GaAs1-xNx with x<0.03 [J].

Perkins, JD ;

Mascarenhas, A ;

Zhang, Y ;

Geisz, JF ;

Friedman, DJ ;

Olson, JM ;

Kurtz, SR .

PHYSICAL REVIEW LETTERS, 1999, 82 (16) :3312-3315

← 1 2 →