Polycrystalline silicon thin film for solar cells utilizing aluminum induced crystallization method

被引：20

作者：

Ishikawa, Y ^{[1
]}

Nakamura, A ^{[1
]}

Uraoka, Y ^{[1
]}

Fuyuki, T ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 03期

关键词：

thin film solar cell; polycrystalline silicon; AIC; hall mobility;

D O I：

10.1143/JJAP.43.877

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In order to realize a polycrystalline silicon (poly-Si) thin film solar cell with low cost and high efficiency, high-quality poly-Si is indispensable. We fabricated a high-quality poly-Si film by using aluminum induced crystallization (AIC) as a method of crystallizing amorphous silicon. AIC is a method of crystallizing amorphous silicon by heat treatment below the eutectic temperature (577degreesC). Using AIC poly-Si film as the seeding layer and atmospheric pressure chemical vapor deposition (APCVD), continuous columnar poly-Si with large grain size was achieved. Deposition of the poly-Si thin film onto AIC poly-Si films was carried out using APCVD. Crystallinity and electronic property of the deposited films was evaluated. Comparably high Hall mobility of more than 80 cm(2)/Vs was successfully obtained.

引用

页码：877 / 881

页数：5

共 10 条

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