Absorbance spectroscopy and identification of valence subband transitions in type-II InAs/GaSb superlattices

被引：44

作者：

Kaspi, R

Moeller, C

Ongstad, A

Tilton, ML

Gianardi, D

Dente, G

Gopaladasu, P

机构：

[1] USAF, Res Lab, Directed Energy Directorate, DELS, Albuquerque, NM 87117 USA

[2] Boeing Def & Space Grp, Albuquerque, NM 87106 USA

[3] GCD Associates, Albuquerque, NM 87110 USA

[4] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 04期

关键词：

D O I：

10.1063/1.125770

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We describe the molecular-beam epitaxy growth, as well as both the structural and optical characterization of a set of InAs/GaSb type-II strained-layer superlattice samples, in which the GaSb layer thickness is systematically increased. Absorbance spectroscopy measurements show well-defined features associated with transitions from the various valence subbands to the lowest conduction subband, and also a significant blueshift of the band edge when the GaSb layers thickness is increased. Empirical pseudopotential method calculations are shown to successfully predict the blueshift and help identify the higher-energy transitions. (C) 2000 American Institute of Physics. [S0003-6951(00)02504-3].

引用

页码：409 / 411

页数：3

共 14 条

[1] Pseudopotential methods for superlattices: Applications to mid-infrared semiconductor lasers [J].