Surface evolution of faceted islands

被引：90

作者：

Rastelli, A ^{[1
]}

von Känel, H

机构：

[1] Swiss Fed Inst Technol, Lab Festkorperphys, CH-8093 Zurich, Switzerland

[2] Univ Pavia, INFM, Dipartimento Fis A Volta, I-27100 Pavia, Italy

[3] Politecn Milan, Dipartimento Fis, I-20133 Milan, Italy

来源：

SURFACE SCIENCE | 2002年 / 515卷 / 2-3期

关键词：

scanning tunneling microscopy; epitaxy; surface structure; morphology; roughness; and topography; silicon; germanium;

D O I：

10.1016/S0039-6028(02)01998-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ge islands were grown on Si(0 0 1) by ultrahigh vacuum magnetron sputter epitaxy and their surface was investigated by scanning tunneling microscopy. The facets composing the island surface were identified and their area was measured as a function of island size. Three kinds of islands were observed: pyramids, dome shaped islands and large dislocated islands. A statistical analysis revealed that domes do not ripen in a self-similar way. The main facets composing the surface of dislocated islands were identified. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：L493 / L498

页数：6

共 18 条

[1] Critical nuclei shapes in the stress-driven 2D-to-3D transition [J].

Chen, KM ;

Jesson, DE ;

Pennycook, SJ ;

Thundat, T ;

Warmack, RJ .

PHYSICAL REVIEW B, 1997, 56 (04) :R1700-R1703

[2] Strain-induced island scaling during Si1-xGex heteroepitaxy [J].

Dorsch, W ;

Strunk, HP ;

Wawra, H ;

Wagner, G ;

Groenen, J ;

Carles, R .

APPLIED PHYSICS LETTERS, 1998, 72 (02) :179-181

[3] Evolution of coherent islands in Si1-xGex/Si(001) [J].

Floro, JA ;

Chason, E ;

Freund, LB ;

Twesten, RD ;

Hwang, RQ ;

Lucadamo, GA .

PHYSICAL REVIEW B, 1999, 59 (03) :1990-1998

[4] Macroscopic and nanoscale faceting of germanium surfaces [J].

Gai, Z ;

Yang, WS ;

Zhao, RG ;

Sakurai, T .

PHYSICAL REVIEW B, 1999, 59 (23) :15230-15239

[5] Major stable surface of silicon: Si(20423) [J].

Gai, Z ;

Zhao, RG ;

Li, WJ ;

Fujikawa, Y ;

Sakurai, T ;

Yang, WS .

PHYSICAL REVIEW B, 2001, 64 (12)

[6] Atomic structure of the Ge(15 3 23) surface [J].

Gai, Z ;

Li, XW ;

Zhao, RG ;

Yang, WS .

PHYSICAL REVIEW B, 1998, 57 (24) :15060-15063

[7] Evolution of Ge islands on Si(001) during annealing [J].

Kamins, TI ;

Medeiros-Ribeiro, G ;

Ohlberg, DAA ;

Williams, RS .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) :1159-1171

[8] Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures [J].

Kamins, TI ;

Carr, EC ;

Williams, RS ;

Rosner, SJ .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (01) :211-219

[9] FACET FORMATION IN STRAINED SI1-XGEX FILMS [J].

LUTZ, MA ;

FEENSTRA, RM ;

MOONEY, PM ;

TERSOFF, J ;

CHU, JO .

SURFACE SCIENCE, 1994, 316 (03) :L1075-L1080

[10] Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes [J].

Medeiros-Ribeiro, G ;

Bratkovski, AM ;

Kamins, TI ;

Ohlberg, DAA ;

Williams, RS .

SCIENCE, 1998, 279 (5349) :353-355

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