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Structural and electronic properties of the Si-rich 6H-SiC(0001) surface

被引：14
作者：
Ahn, JR
Lee, SS
Kim, ND
Hwang, CG
Min, JH
Chung, JW
机构：
[1] Pohang Univ Sci & Technol, Dept Phys, Basic Sci Res Inst, Pohang 790784, South Korea
[2] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
[3] Yonsei Univ, Atom Scale Sci Res Ctr, Seoul 120749, South Korea
来源：
SURFACE SCIENCE | 2002年 / 516卷 / 03期
关键词：
electron energy loss spectroscopy (EELS); low energy electron diffraction (LEED); surface electronic phenomena (work; function; surface potential; surface states etc.); silicon carbide; insulating surfaces;
D O I：
10.1016/S0039-6028(02)02088-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have investigated structural and electronic properties of the Si-rich 6H-SiC(0 0 0 1)-3 x 3 surface and the clean root3 x root3R30degrees surface with high resolution electron-energy-loss spectroscopy. We find that the 3 x 3 and the root3 x root3R30degrees surfaces prepared at 980 degreesC are 2D Mott-Hubbard insulators primarily by evaluating the effective on-site Coulomb repulsion energy (U*) energy directly from our electron-energy-loss spectroscopy data. We find that a criterion of U* much greater than t* (t*: intersite hopping energy) is well satisfied for these surfaces thus confirming the typical nature of a Mott-Hubbard insulator. (C) 2002 Elsevier Science B.V. All rights reserved.
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页码：L529 / L534
页数：6
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