Structural and electrical characteristics of HfO2 films fabricated by pulsed laser deposition

被引：42

作者：

Ikeda, H

Goto, S

Honda, K

Sakashita, M

Sakai, A

Zaima, S

Yasuda, Y

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Ctr Cooperat Res Adv Sci & Technol, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 4B期

关键词：

pulsed laser deposition; HfO2; grain boundary; capacitance-voltage characteristics; leakage current;

D O I：

10.1143/JJAP.41.2476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the structural and electrical characteristics of HfO2 films deposited by a pulsed laser deposition (PLD) method, It was found that the formation of interlayers at the HfO2/Si interface depends strongly on the oxygen pressure rather than the deposition temperature during PLD. Furthermore. we determined the electrical properties which are closely related to the structure and orientation of grains in the polycrystalline HfO2 films. It was, noted that randomly oriented HfO2 films have capacitance-voltage curves with no hysteresis and low leakage current.

引用

页码：2476 / 2479

页数：4

共 6 条

[1] Structure and stability of ultrathin zirconium oxide layers on Si(001) [J].