STUDY OF SPUTTERED HFO2 THIN-FILMS ON SILICON

被引：69

作者：

KUO, CT ^{[1
]}

KWOR, R ^{[1
]}

JONES, KM ^{[1
]}

机构：

[1] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401

来源：

THIN SOLID FILMS | 1992年 / 213卷 / 02期

关键词：

D O I：

10.1016/0040-6090(92)90291-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin HfO2 films were deposited on Si(100) wafers by magnetron sputtering, followed by a high temperature anneal in oxygen. Structure evolution and/or allotropic transformation occurred during the annealing process. A very thin well-defined SiO2 layer was also formed at the HfO2-Si interface as a result of annealing. The HfO2/SiO2 film showed a high dielectric constant, very low leakage current, extremely high dielectric strength, low dielectric loss, well-behaved capacitance-voltage characteristics and good stability, making it a viable candidate for applications in very-large-scale and ultralarge-scale integration circuits.

引用

页码：257 / 264

页数：8

共 28 条

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