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SEU cross sections derived from a diffusion analysis

被引：28
作者：
Edmonds, LD
机构：
[1] Jet Propulsion Laboratory, California Institute of Technology, Pasadena
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 06期
基金：
美国国家航空航天局;
关键词：
D O I：
10.1109/23.552719
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple theoretical prediction of single-event upset (SEU) cross section versus linear energy transfer (LET) is derived from a diffusion analysis, and the result is compared to some real device curves, It was found that at least some real device curves show two regimes, One regime (high-LET) is characterized by a very good fit to the theoretical prediction, and the other (low-LET) is characterized by a very bad fit, The existence of a high-LET regime provides additional credibility for the increasingly popular postulate that diffusion has an important effect on the shape of the cross-sectional curve.
引用
收藏
页码：3207 / 3217
页数：11
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