Effects of growth temperature and V/III ratio on surface structure and ordering in Ga0.5In0.5P

被引:20
作者
Murata, H [1 ]
Ho, IH [1 ]
Stringfellow, GB [1 ]
机构
[1] UNIV UTAH, DEPT MAT SCI & ENGN & ELECT ENGN, SALT LAKE CITY, UT 84112 USA
关键词
D O I
10.1016/S0022-0248(96)00556-8
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Surface photoabsorption (SPA) measurements were used to clarify the CuPt ordering mechanism in Ga0.5In0.5P layers grown by organometallic vapor phase epitaxy. The CuPt ordering is known to be strongly affected by the growth temperature and the input partial pressure of the phosphorus precursor, i.e. the V/III ratio. The SPA peak at similar to 400 nm was found to be a measure of the concentration of [<(1)over bar 10>]-oriented phosphorus dimers on the surface, which are characteristic of the (2 x 4) reconstruction. Both ordering, measured using the low temperature photoluminescence peak energy, and the SPA signal difference due to P dimers were studied versus the growth temperature and V/III ratio. The degree of order decreases markedly with increasing growth temperature above 620 degrees C at a constant V/III ratio of 40. This corresponds directly to a decrease of the [<(1)over bar 10>]-oriented P dimer concentration on the surface determined using SPA. Below 620 degrees C, the degree of order decreases as the growth temperature decreases, even though the concentration of P dimers increases. The presence of an isotropic ''excess P'' phase observed in the SPA spectrum at similar to 480 nm might be responsible for the decrease of CuPt ordering, although it has previously been attributed to the slow rearrangement of adatoms. The degree of order is found to decrease monotonically with decreasing V/III ratio in the range from 160 to 8 at 670 degrees C and from 40 to 8 at 620 degrees C. This also corresponds directly to the decrease of the P dimer concentration on the surface measured using SPA. At 620 degrees C and a V/III ratio of 160, the degree of order decreased despite an increase of the P dimer concentration. This may also be due to the formation of the isotropic ''excess P'' phase on the surface. The direct correlation of the [<(1)over bar 10>]-oriented P dimer concentration and the degree of order with changes in temperature (greater than or equal to 620 degrees C) and V/III ratio (less than or equal to 160 at 670 degrees C and less than or equal to 40 at 620 degrees C) suggests that, in this range of growth parameters, the (2 x 4) surface reconstruction is necessary to form the CuPt structure, in agreement with published theoretical studies.
引用
收藏
页码:219 / 224
页数:6
相关论文
共 18 条
[1]  
ERNST P, 1995, MAT RES SOC M NOV BO
[2]   STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE [J].
GOMYO, A ;
KOBAYASHI, K ;
KAWATA, S ;
HINO, I ;
SUZUKI, T ;
YUASA, T .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :367-373
[3]   OBSERVATION OF A NEW CUPT-TYPE ORDERED-PHASE WITH ORIENTATION IN THE [111]A DIRECTION IN AL0.5IN0.5P ALLOY [J].
GOMYO, A ;
SUMINO, M ;
HINO, I ;
SUZUKI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (4B) :L469-L472
[4]   HIGH-TEMPERATURE (GREATER-THAN-150-DEGREES-C) AND LOW THRESHOLD CURRENT OPERATION OF ALGAINP/GAXIN1-XP STRAINED MULTIPLE QUANTUM-WELL VISIBLE LASER-DIODES [J].
KATSUYAMA, T ;
YOSHIDA, I ;
SHINKAI, J ;
HASHIMOTO, J ;
HAYASHI, H .
APPLIED PHYSICS LETTERS, 1991, 59 (26) :3351-3353
[5]   VERY HIGH-EFFICIENCY SEMICONDUCTOR WAFER-BONDED TRANSPARENT-SUBSTRATE (ALXGA1-X)0.5IN0.5P/GAP LIGHT-EMITTING-DIODES [J].
KISH, FA ;
STERANKA, FM ;
DEFEVERE, DC ;
VANDERWATER, DA ;
PARK, KG ;
KUO, CP ;
OSENTOWSKI, TD ;
PEANASKY, MJ ;
YU, JG ;
FLETCHER, RM ;
STEIGERWALD, DA ;
CRAFORD, MG ;
ROBBINS, VM .
APPLIED PHYSICS LETTERS, 1994, 64 (21) :2839-2841
[6]   Chemical-bonding structure of InP surface in MOVPE studied by surface photo-absorption [J].
Kobayashi, Y ;
Kobayashi, N .
JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (04) :691-694
[7]   ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P [J].
KONDOW, M ;
KAKIBAYASHI, H ;
MINAGAWA, S .
JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) :291-296
[8]  
KURTZ SR, 1994, MATER RES SOC SYMP P, V340, P117, DOI 10.1557/PROC-340-117
[9]   EFFECTS OF ATOMIC CLUSTERING ON THE OPTICAL-PROPERTIES OF III-V ALLOYS [J].
MADER, KA ;
ZUNGER, A .
APPLIED PHYSICS LETTERS, 1994, 64 (21) :2882-2884
[10]   Surface photoabsorption studies of the chemical structure of GaInP grown by organometallic vapor phase epitaxy [J].
Murata, H ;
Ho, IH ;
Hsu, TC ;
Stringfellow, GB .
APPLIED PHYSICS LETTERS, 1995, 67 (25) :3747-3749