Characterization of electrically active deep level defects in 4H and 6H SiC

被引：24

作者：

Doyle, JP ^{[1
]}

Aboelfotoh, MO ^{[1
]}

Svensson, BG ^{[1
]}

Schoner, A ^{[1
]}

Nordell, N ^{[1
]}

机构：

[1] IND MICROELECT CTR,S-16421 KISTA,SWEDEN

来源：

关键词：

defects; SIMS; DLTS; deep levels;

D O I：

10.1016/S0925-9635(97)00102-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Electrically active deep level defects have been characterized in n-type 6H- and 4H-SiC utilizing deep level transient spectroscopy (DLTS). In both polytypes, defects are observed in the as-grown stair. In 6H-SiC two levels in the energy gap at 0.34 and 0.41 eV below the conduction band edge (E-c) are suggested as being intrinsic in nature as their concentration increases after 2 MeV electron irradiation. Additionally, a level 0.51 eV below E-c observed after electron or deuterium irradiation anneals out completely below 300 degrees C. In as-grown epitaxial layers of the 4H-SiC polytype, a level 0.70 eV below E-c is found with a capture cross-section of 4 x 10(-14) cm(2) and a concentration at or below 1 x 10(13) cm(-3) exhibits acceptor-like behavior. Secondary ion mass spectrometry (SIMS) profiling reveals no evidence for Ti, V, or Cr incorporation into th epitaxial layers above approximate to 10(13) cm(-3). (C) 1997 Elsevier Science S.A.

引用

页码：1388 / 1391

页数：4

共 10 条

[1]

ACHTZIGER N, IN PRESS P E MRS 199

[2]

DOYLE JP, IN PRESS P 1996 SPRI

[3] Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC [J].