Electrical characterization of subbands in the HgCdTe surface layer

被引：9

作者：

Gui, YS ^{[1
]}

Zheng, GZ ^{[1
]}

Chu, JH ^{[1
]}

Guo, SL ^{[1
]}

Zhang, XC ^{[1
]}

Tang, DY ^{[1
]}

Cai, Y ^{[1
]}

机构：

[1] KUNMING INST PHYS,KUNMING 650223,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 10期

关键词：

D O I：

10.1063/1.366369

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The subband dispersion relations have been computed as a function of the surface electron concentration in the accumulation layers of n-Hg1-xCdxTe photoconductive detectors, while the mobility and concentration for all kinds of carriers in the subband are determined from Shubnikov-de Haas (SdH) oscillation measurements and quantitative mobility spectrum analysis (QMSA). The results show that the QMSA can provide accurate electric parameters for all kinds of carriers in the subband without considering the complex energy band in the semiconductors, while the SdH oscillation can only offer qualitative data because the analysis is based on parabolic energy band approximation. (C) 1997 American Institute of Physics.

引用

页码：5000 / 5004

页数：5

共 24 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].