Localized transient charging and it's implication on the hot carrier reliability of HfSiON MOSFETs

被引：28

作者：

Lee, BH ^{[1
]}

Sim, JH ^{[1
]}

Choi, R ^{[1
]}

Bersuker, G ^{[1
]}

Matthew, K ^{[1
]}

Moumen, N ^{[1
]}

机构：

[1] Int SEMATECH, IBM Assignee, Austin, TX 78741 USA

来源：

2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS | 2004年

关键词：

D O I：

10.1109/RELPHY.2004.1315454

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hot carrier reliability of poly-gated and TiN-gated MOSFETs with HfSiON gate dielectric is studied. For short channel devices, worse degradation of HfSiON occurs at V-g=V-d while oxide devices are degraded more at V-g=V-d/2 similar to oxide control devices. Localized transient charging at the drain corner of the HfSiON layer is proposed to explain the channel length dependence and time dependent relaxation of HC reliability characteristics.

引用

页码：691 / 692

页数：2

共 11 条

[1] Stress polarity dependence of degradation and breakdown of SiO2/high-k stacks [J].

Degraeve, R ;

Kauerauf, T ;

Kerber, A ;

Cartier, E ;

Govoreanu, B ;

Roussel, P ;

Pantisano, L ;

Blomme, P ;

Kaczer, B ;

Groeseneken, G .

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, :23-28

[2]

Kim YH, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P629, DOI 10.1109/IEDM.2002.1175918

[3] Reliability projection and polarity dependence of TDDB for ultra thin CVD HfO2 gate dielectrics [J].

Lee, SJ ;

Rhee, SJ ;

Clark, R ;

Kwong, DL .

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2002, :78-79

[4]

Li E., 1999, P IEEE INT REL PHYS, P253, DOI [10.1109/RELPHY.1999.761622., DOI 10.1109/RELPHY.1999.761622]

[5] Hot carrier reliability of n-MOSFET with ultra-thin HfO2 gate dielectric and poly-Si gate [J].

Lu, Q ;

Takeuchi, H ;

Lin, R ;

King, TJ ;

Hu, CM ;

Onishi, K ;

Choi, R ;

Kang, CS ;

Lee, JC .

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, :429-430

[6]

Morisaki Y, 2002, INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, P861, DOI 10.1109/IEDM.2002.1175973

[7]

ONISHI K, 2001, IEDM, P659

[8] Accurate reliability evaluation of non-uniform ultrathin oxynitride and high-k layers [J].

Roussel, P ;

Degraeve, R ;

Kerber, A ;

Pantisano, L ;

Groeseneken, G .

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, :29-33

[9] Evaluation of the positive biased temperature stress stability in HfSiON gate dielectrics [J].

Shanware, A ;

Visokay, MR ;

Chambers, JJ ;

Rotondaro, ALP ;

Bu, H ;

Bevan, MJ ;

Khamankar, R ;

Aur, S ;

Nicollian, PE ;

McPherson, J ;

Colombo, L .

41ST ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2003, :208-213

[10]

Takeuchi K., 1993, International Electron Devices Meeting 1993. Technical Digest (Cat. No.93CH3361-3), P883, DOI 10.1109/IEDM.1993.347259

← 1 2 →