Bimolecular recombination in ambipolar organic field effect transistors

被引：16

作者：

Charrier, D. S. H. ^{[1
]}

de Vries, T. ^{[2
]}

Mathijssen, S. G. J. ^{[1
,3
]}

Geluk, E. -J. ^{[2
]}

Smits, E. C. P. ^{[3
,4
]}

Kemerink, M. ^{[1
]}

Janssen, R. A. J. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands

[3] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[4] Univ Groningen, Zernike Inst Adv Mat, NL-9700 AB Groningen, Netherlands

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 05期

关键词：

Bimolecular recombination; Organic field effect transistor; Scanning Kelvin probe microscopy; Deconvolution; KELVIN PROBE MICROSCOPY; FORCE MICROSCOPY; RESOLUTION;

D O I：

10.1016/j.orgel.2009.03.010

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron-hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy (SKPM). However, surface potentials as measured by SKPM are distorted due to spurious capacitive couplings. Here, we present a (de)convolution method with an experimentally calibrated transfer function to reconstruct the actual surface potential from a measured SKPM response and vice versa. Using this scheme, we find W = 0.5 mu m for a nickel dithiolene OFET, which translates into a recombination rate that is two orders of magnitude below the value expected for Langevin recombination. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：994 / 997

页数：4

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