Contacts of titanium nitride to n- and p-type gallium nitride films

被引：38

作者：

Dimitriadis, CA ^{[1
]}

Karakostas, T

Logothetidis, S

Kamarinos, G

Brini, J

Nouet, G

机构：

[1] Univ Thessaloniki, Dept Phys, GR-54006 Salonika, Greece

[2] ENSERG, LPCS, F-38016 Grenoble 1, France

[3] LERMAT, UPRESA CNRS 6004, F-14050 Caen, France

来源：

SOLID-STATE ELECTRONICS | 1999年 / 43卷 / 10期

关键词：

D O I：

10.1016/S0038-1101(99)00153-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical characteristics of titanium nitride (TINx) contacts to n- and p-type GaN films, deposited by reactive magnetron sputtering at room temperature, are investigated. The contacts of TINx to n-type GaN are ohmic and to p-type GaN are rectifying, while their properties are strongly dependent on the stoichiometry of the deposited titanium nitride layer. It is shown that the ohmic behavior of the contacts is associated with the presence of a high density of interface states and not to the low Schottky barrier. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：1969 / 1972

页数：4

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