Growth of InSb on GaAs using InAlSb buffer layers

被引：16

作者：

Biefeld, RM ^{[1
]}

Phillips, JD ^{[1
]}

机构：

[1] Sandia Natl Labs, Dept 1113, Albuquerque, NM 87185 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 04期

关键词：

metal-organic chemical vapor deposition; epitaxy; electron mobility; InSb;

D O I：

10.1016/S0022-0248(99)00751-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the growth of InSb on GaAs using InAlSb buffers of high interest for magnetic field sensors. We have grown samples by metal-organic chemical vapor deposition consisting of similar to 0.55 mu m thick Insb layers with InAlSb buffers on GaAs substrates with measured electron mobilities of similar to 40000 cm(2)/V s. We have investigated the In1-xAlxSb buffers for compositions x less than or equal to 0.22 and have found that the best results are obtained near x = 0.12 due to the tradeoff of buffer layer band gap and lattice mismatch. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：567 / 571

页数：5

共 9 条

[1] GROWTH OF INSB USING TRIS(DIMETHYLAMINO)ANTIMONY AND TRIMETHYLINDIUM [J].

BAUCOM, KC ;

BIEFELD, RM .

APPLIED PHYSICS LETTERS, 1994, 64 (22) :3021-3023

[2] The growth of AlInSb by metalorganic chemical vapor deposition [J].

Biefeld, RM ;

Allerman, AA ;

Baucom, KC .

JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) :L43-L46

[3] GROWTH OF INSB ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

BIEFELD, RM ;

HEBNER, GA .

JOURNAL OF CRYSTAL GROWTH, 1991, 109 (1-4) :272-278

[4] In situ pre-growth calibration using reflectance as a control strategy for MOCVD fabrication of device structures [J].

Breiland, WG ;

Hou, HQ ;

Chui, HC ;

Hammons, BE .

JOURNAL OF CRYSTAL GROWTH, 1997, 174 (1-4) :564-571

[5] NARROW-GAP SEMICONDUCTOR MAGNETIC-FIELD SENSORS AND APPLICATIONS [J].

HEREMANS, J ;

PARTIN, DL ;

THRUSH, CM ;

GREEN, L .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :S424-S430

[6] UNIFORM GROWTH OF INSB ON GAAS IN A ROTATING-DISK REACTOR BY LP-MOVPE [J].

MCKEE, MA ;

YOO, BS ;

STALL, RA .

JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) :286-291

[7] GROWTH OF HIGH-MOBILITY INSB BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

PARTIN, DL ;

GREEN, L ;

HEREMANS, J .

JOURNAL OF ELECTRONIC MATERIALS, 1994, 23 (02) :75-79

[8] The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors [J].

Partin, DL ;

Pelczynski, M ;

Cooke, P ;

Green, L ;

Heremans, J ;

Thrush, CM .

JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :378-384

[9] Effect of an In1-xAlxSb buffer layer on InSb thin film mobility [J].

Partin, DL ;

Heremans, J ;

Thrush, CM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1267-1271

← 1 →