GROWTH OF INSB USING TRIS(DIMETHYLAMINO)ANTIMONY AND TRIMETHYLINDIUM

被引：17

作者：

BAUCOM, KC

BIEFELD, RM

机构：

[1] Sandia National Laboratories, Albuquerque, NM 87185

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 22期

关键词：

D O I：

10.1063/1.111391

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown epitaxial layers of InSb on p--InSb substrates by metalorganic chemical vapor deposition using tris(dimethylamino)antimony (TDMASb) and trimethylindium (TMIn). Growth temperatures from 285 to 500-degrees-C and pressures from 76 to 660 Torr have been investigated. The V/III ratio was varied from 0.63 to 8.6 using growth rates from 0.06 to 0.67 mum/h. For temperatures less-than-or-equal-to 425-degrees-C, the growth rate was proportional to the temperature. The growth rate was proportional to the TMIn flow at all temperatures. Temperatures >400-degrees-C produced p-type layers while growth temperatures less-than-or-equal-to 400-degrees-C produce n-type layers. The pyrolysis temperature of TDMASb appears to be lower than that of TMIn.

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页码：3021 / 3023

页数：3

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