IMPROVING THE PERFORMANCE OF INAS1-XSBX/INSB INFRARED DETECTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

Diethylselenium and tetraethyltin were investigated as n-type dopants for InSb. Carrier concentrations between 6X10(15) and 4X10(18)cm-3 with 77 K mobilities ranging from 75,000 to 10,000 cm2/V.s were achieved for Sn doped InSb. Triethylantimony and trimethylindium were used to grow InSb over the temperature range of 410-470-degrees-C with a decrease in the p-type background occurring at 410-degrees-C. Diodes were prepared using tetraethyltin, trimethylindium and trimethylantimony at 470-degrees-C. The resulting current-voltage characteristics are improved over those of diodes grown previously using dimethyltellurium. SIMS measurements indicate a diffusion coefficient for Sn in InSb at 470-degrees-C that is approximately 1X10(-15)cm2/s.