Organic thin-film transistors with poly(methyl silsesquioxane) modified dielectric interfaces

被引:30
作者
Wu, Yiliang [1 ]
Liu, Ping [1 ]
Ong, Beng S. [1 ]
机构
[1] Xerox Res Ctr Canada Ltd, Mat Design & Integrat Lab, Mississauga, ON L5K 2L1, Canada
关键词
D O I
10.1063/1.2219143
中图分类号
O59 [应用物理学];
学科分类号
摘要
Poly(methyl silsesquioxane) modification of SiO2 gate dielectric surface leads to significantly improved performance of polythiophene-based organic thin-film transistors. The beneficial effects of this surface modification on transistor performance are often significantly greater than those of other silane self-assembled monolayers (SAMs). This polymer modification approach can also be applied to solution-processed dielectric surfaces where the growth of silane SAMs is difficult, thus enabling fabrication of flexible organic thin-film transistor circuits on plastic substrates. (c) 2006 American Institute of Physics.
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页数:3
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