共 9 条
[1]
LATERAL DOPANT PROFILING IN SEMICONDUCTORS BY FORCE MICROSCOPY USING CAPACITIVE DETECTION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (02)
:703-706
[2]
Two-dimensional dopant profiling of very large scale integrated devices using selective etching and atomic force microscopy
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1996, 14 (01)
:447-451
[3]
[4]
Fabrication of multipurpose piezoresistive Wheatstone bridge cantilevers with conductive microtips for electrostatic and scanning capacitance microscopy
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1998, 16 (06)
:3948-3953
[5]
CAPACITANCE-VOLTAGE MEASUREMENT AND MODELING ON A NANOMETER-SCALE BY SCANNING C-V MICROSCOPY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1994, 12 (01)
:369-372
[8]
ELECTROSTATIC FORCE MICROSCOPE IMAGING ANALYZED BY THE SURFACE-CHARGE METHOD
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1993, 11 (05)
:1774-1781
[9]
HIGH-RESOLUTION ATOMIC FORCE MICROSCOPY POTENTIOMETRY
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1991, 9 (03)
:1559-1561

