Two-dimensional dopant profiling of very large scale integrated devices using selective etching and atomic force microscopy

We report a detailed mapping of a two-dimensional dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and atomic force microscopy. The experimental profiling results show excellent agreement with those obtained from spreading resistance probe and secondary ion mass spectroscopy as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this dopant selective etching method. (C) 1996 American Vacuum Society.