TRANSMISSION ELECTRON-MICROSCOPY STUDY OF 2-DIMENSIONAL SEMICONDUCTOR-DEVICE JUNCTION DELINEATION BY CHEMICAL ETCHING

被引:9
作者
LIU, JB [1 ]
DASS, MLA [1 ]
GRONSKY, R [1 ]
机构
[1] INTEL CORP, SANTA CLARA, CA 95051 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 01期
关键词
D O I
10.1116/1.587124
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Quantitative chemical delineation of both n+ and p+ junctions in silicon-based integrated circuits has been achieved and monitored with respect to etching time, temperature, and ultraviolet illumination, using samples prepared by a new planar polishing technique for uniform initial flatness. Junction depths and dopant profiles obtained from cross-sectional transmission electron microscopy images are compared and cross-calibrated with both secondary ion mass spectrometry and spreading resistance profiling, confirming that dopant concentrations of 10(17) cm-3 are detected and laterally mapped with 10 nm spatial resolution.
引用
收藏
页码:353 / 356
页数:4
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