STRATEGIES FOR SHALLOW JUNCTION AND PROFILE FORMATION

The main strategies for shallow doped layer formation in semiconductors are outlined and the physicochemical characteristics of two of these, direct implantation and diffusion from overlayers, are described. The changing implementation of these techniques is discussed in the context of bipolar and metal-oxide semiconductor silicon integrated circuit fabrication technologies as these have progressed to submicron geometries and ultra-large-scale integration densities. The crucial shallow one and two dimensional doped regions thus fabricated are presented as important and difficult challenges for state-of-the-art compositional analysis techniques.