High Electron Mobility in Vacuum and Ambient for PDIF-CN2 Single-Crystal Transistors

被引：242

作者：

Molinari, Anna S. ^{[1
]}

Alves, Helena ^{[3
]}

Chen, Zhihua ^{[2
]}

Facchetti, Antonio ^{[2
]}

Morpurgo, Alberto F. ^{[4
,5
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] Polyera Corp, Skokie, IL 60077 USA

[3] INESC MN, P-1000029 Lisbon, Portugal

[4] Univ Geneva, DPMC, CH-1211 Geneva, Switzerland

[5] Univ Geneva, GAP, CH-1211 Geneva, Switzerland

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2009年 / 131卷 / 07期

关键词：

FIELD-EFFECT TRANSISTORS; FUNCTIONALIZED ACENES; TRANSPORT;

D O I：

10.1021/ja809848y

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Single-crystal field-effect transistors (FETs) based on a fluorocarbon-substituted dicyanoperylene-3,4:9, 10-bis(dicarboximide) [PDIF-CN2] were fabricated by lamination of the semiconductor crystal on Si-SiO2/PMMA-Au gate-dielectric-contact substrates. These devices were characterized both in vacuum and in the air, and they exhibit electron mobilities of ca. 6-3 and ca. 3-1 cm(2) V-1 s(-1), respectively, I-on:I-off > 10(3), and near-zero threshold voltage.

引用

页码：2462 / +

页数：4

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