Optical modulation at around 1550 nm in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diode

被引：17

作者：

Figueiredo, JML ^{[1
]}

Boyd, AR

Stanley, CR

Ironside, CN

McMeekin, SG

Leite, AMP

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

[2] Univ Wales, Cardiff Sch Engn, Cardiff NP2 1XH, S Glam, Wales

[3] Univ Porto, Ctr Fis Porto, ADFCUP, P-4169007 Porto, Portugal

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 22期

关键词：

D O I：

10.1063/1.125290

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report electroabsorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing an InGaAs/AlAs double-barrier resonant tunneling diode (RTD). The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absorption band edge to longer wavelengths via the Franz-Keldysh effect, thus changing the light-guiding characteristics of the waveguide. Low-frequency characterization of a device shows modulation up to 28 dB at 1565 nm. When dc biased close to the negative differential conductance region, the RTD optical waveguide behaves as an electroabsorption modulator integrated with a wide bandwidth electrical amplifier, offering a potential advantage over conventional pn modulators. (C) 1999 American Institute of Physics. [S0003-6951(99)00748-2].

引用

页码：3443 / 3445

页数：3

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