NON-ALLOYED OHMIC CONTACTS TO N-GAAS USING COMPOSITIONALLY GRADED INXGA1-XAS LAYERS

被引：48

作者：

NITTONO, T

ITO, H

NAKAJIMA, O

ISHIBASHI, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.1718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1718 / 1722

页数：5

共 17 条

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[7] EXTREMELY LOW RESISTANCE NONALLOYED OHMIC CONTACTS TO N-GAAS USING COMPOSITIONALLY GRADED INXGA1-XAS LAYERS [J].

NITTONO, T ;

ITO, H ;

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[10] ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER [J].

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) :1845-1845

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