THERMALLY STABLE, LOW-RESISTANCE NILNW OHMIC CONTACTS TO N-TYPE GAAS

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] UNIFORM AND THERMALLY STABLE AUGENI OHMIC CONTACTS TO GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1141 - 1143

[3] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 85 - 87

[4] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[5] THE EFFECTS OF CONTACT SIZE AND NON-ZERO METAL RESISTANCE ON THE DETERMINATION OF SPECIFIC CONTACT RESISTANCE [J]. SOLID-STATE ELECTRONICS, 1982, 25 (02) : 91 - 94

[6] MICROSTRUCTURE STUDIES OF AUNIGE OHMIC CONTACTS TO N-TYPE GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 903 - 911

[7] MURAKAMI M, IN PRESS J APPL PHYS

[8] Tiwari S., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P262

[1] MODELS FOR CONTACTS TO PLANAR DEVICES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (02) : 145 - &

[2] UNIFORM AND THERMALLY STABLE AUGENI OHMIC CONTACTS TO GAAS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1141 - 1143

[3] HEAT-PULSE ANNEALING OF ARSENIC-IMPLANTED SILICON WITH A CW ARC LAMP [J]. ELECTRON DEVICE LETTERS, 1981, 2 (04): : 85 - 87

[4] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[5] THE EFFECTS OF CONTACT SIZE AND NON-ZERO METAL RESISTANCE ON THE DETERMINATION OF SPECIFIC CONTACT RESISTANCE [J]. SOLID-STATE ELECTRONICS, 1982, 25 (02) : 91 - 94

[6] MICROSTRUCTURE STUDIES OF AUNIGE OHMIC CONTACTS TO N-TYPE GAAS [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 903 - 911

[7] MURAKAMI M, IN PRESS J APPL PHYS

[8] Tiwari S., 1986, International Electron Devices Meeting 1986. Technical Digest (Cat. No.86CH2381-2), P262