MICROSTRUCTURE STUDIES OF AUNIGE OHMIC CONTACTS TO N-TYPE GAAS

被引：115

作者：

MURAKAMI, M ^{[1
]}

CHILDS, KD ^{[1
]}

BAKER, JM ^{[1
]}

CALLEGARI, A ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 04期

关键词：

D O I：

10.1116/1.583535

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：903 / 911

页数：9

共 26 条

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