Optical control of resonant tunneling diode monolithically integrated with PIN photodiode

被引：11

作者：

Kan, SC

Harshman, PJ

Lau, KY

Wang, Y

Wang, WI

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] COLUMBIA UNIV,DEPT ELECT ENGN,NEW YORK,NY 10027

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 05期

关键词：

D O I：

10.1109/68.491565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical control of the resonant tunneling characteristics of an integrated optoelectronic device with a monolithic integrated double-barrier/PIN structure is studied. Optical switching of the bistable resonant tunneling state and optical injection locking of a resonant tunneling oscillator at 1 GHz are demonstrated.

引用

收藏

页码：641 / 643

页数：3

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