Flexible low voltage nonvolatile memory transistors with pentacene channel and ferroelectric polymer

被引：93

作者：

Lee, Kwang H. ^{[1
]}

Lee, Gyubaek ^{[1
]}

Lee, Kimoon ^{[1
]}

Oh, Min Suk ^{[1
]}

Im, Seongil ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 09期

关键词：

conducting polymers; ferroelectric materials; field effect transistors; organic semiconductors; semiconductor storage; thin film transistors; THICKNESS;

D O I：

10.1063/1.3089379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication of pentacene-based nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) ferroelectric gate insulators. Our NVM-TFT adopts flexible polyethersulfone substrate and operates under the low voltage write-erase (WR-ER) pulses of +/- 13 similar to +/- 20 V with field effect mobilities of 0.1-0.18 cm(2)/V s, depending on the ferroelectric polymer thickness. Our NVM-TFT displays good memory window (Delta V) of 2.5-8 V and also exhibits WR-ER current ratio of 20-40. The retention properties persist over similar to 10 000 s and the dynamic response for WR-ER pulses demonstrates clear distinction of WR-ER states under the short switching pulse of 50 ms.

引用

页数：3

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