Performance limiting surface defects in SiC epitaxial p-n junction diodes

被引：186

作者：

Kimoto, T ^{[1
]}

Miyamoto, N ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6068501, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 03期

关键词：

carrier lifetime; high-power device; p-n diode; silicon carbide; surface recombination;

D O I：

10.1109/16.748864

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Effects of surface defects on performance of kV-class 4H- and 6H-SiC: epitaxial p-n junction diodes were investigated. The perimeter recombination and generation, instead of the bulk process, are responsible for forward recombination current and reverse leakage current of the diodes, respectively. Mapping studies of surface morphological defects have revealed that triangular-shaped defects severely degrade high-blocking capability of the diodes whereas shallow round pits and scratch give no direct impact. Device-killing defects in SiC epilayers are discussed based on breakdown voltage mapping. Effective minority carrier lifetimes are mainly limited not by bulk recombination but by perimeter recombination.

引用

页码：471 / 477

页数：7

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