Micromechanical electrometry of single-electron transistor island charge

被引：3

作者：

Blencowe, MP ^{[1
]}

Zhang, Y ^{[1
]}

机构：

[1] Dartmouth Coll, Dept Phys & Astron, Hanover, NH 03755 USA

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 316卷

关键词：

single-electron transistors; micromechanical systems;

D O I：

10.1016/S0921-4526(02)00529-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We consider the possibility of using a micromechanical gate electrode located just above the island of a single-electron transistor to measure directly the fluctuating island charge due to tunnelling electrons. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：411 / 412

页数：2

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