Electronic transition of Au-induced atomic chains on Si(5512): A strong similarity with the Au/Si(557) system

被引:31
作者
Ahn, JR
Yeom, HW [1 ]
Cho, ES
Park, CY
机构
[1] Yonsei Univ, Ctr Atom Wires & Layers, Seoul 120749, South Korea
[2] Sungkyunkwan Univ, Phys Res Div Bk21, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea
关键词
D O I
10.1103/PhysRevB.69.233311
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigated in detail the electronic structures of the Si(5 5 12) surface with Au adsorbates, which features one-dimensional (1D) atomic chains and a 1D metallic band. From angle-resolved UV photoelectron spectroscopy, we resolved that the nearly half-filled 1D band is actually composed of two parallel branches; one is metallic, but the other is insulating with an energy gap of 50 meV below E-F at room temperature. An energy gap evolves gradually from 270 K on the metallic branch, saturating at 75 K with a size of 40 meV below E-F, while the insulating branch is intact. These behaviors are essentially identical with those recently reported on the Au/Si(5 5 7) system [ Phys. Rev. Lett. 91, 196403 (2003) ]. The scanning tunneling microscopy imaging indicates that these surfaces possess common 1D atomic chain structures, while the interchain distance is different. This explains the very similar electronic structure and transition of the two systems.
引用
收藏
页码:233311 / 1
页数:4
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