Band offsets at heterojunctions between SrTiO3 and BaTiO3 and Si(100)

被引：58

作者：

Amy, F

Wan, AS

Kahn, A ^{[1
]}

Walker, FJ

McKee, RA

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 03期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1766417

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We use thin (similar to26 Angstrom) SrTiO3 and BaTiO3 films epitaxially grown on Si(100) substrates, and ultraviolet and x-ray photoemission spectroscopy to investigate band discontinuities at the SrTiO3/Si and BaTiO3/Si heterojunctions. The treatment of the oxide film surface ranges from ex situ ultraviolet generated ozone to annealing in O-2 or ultrahigh vacuum. Depending on surface treatment, the valence band offset varies from 2.38 to 2.64 eV for SrTiO3/Si heterostructure and from 2.35 to 2.66 eV for BaTiO3/Si. These values imply that the conduction band minimum of the oxide is below that of the semiconductor, a situation referred to as negative conduction band offset. We demonstrate that the SrTiO3/Si and BaTiO3/Si interfaces undergo significant chemical changes during surface cleaning of the oxide film. (C) 2004 American Institute of Physics.

引用

页码：1635 / 1639

页数：5

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