Formation of bubbles and extended defects in He implanted (100) Si at elevated temperatures

被引：8

作者：

da Silva, DL

Mörschbächer, MJ

Fichtner, PFP

Oliviero, E

Behar, M

机构：

[1] Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

[2] Univ Fed Rio Grande Sul, Dept Met, BR-91501970 Porto Alegre, RS, Brazil

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2004年 / 219卷

关键词：

He retention; bubble nucleation; extended defects; silicon;

D O I：

10.1016/j.nimb.2004.01.148

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The formation and thermal evolution of He bubbles and extended defects in Si are studied as a function of the implantation (T-i) and annealing (T-a) temperatures. (1 0 0) Si wafers were implanted with 40 keV He+ ions to a fluence of 1 x 10(16) cm(-2) at temperatures T-i from 300 to 623 K. After the implantations the samples were submitted to thermal treatments for 600 s at temperatures T-a from 673 to 1073 K. The samples were analyzed using transmission electron microscopy (TEM), Rutherford backscattering/channeling (RBS/C) and elastic recoil detection (ERD) techniques. The results obtained show that the microstructure characteristics of the bubble and the extended defect systems, as well as their thermal evolution behavior, depend significantly on the implantation temperature. A correlation between the dynamic annealing behavior and the bubble and defect formation process is proposed. (C) 2004 Elsevier B.V. All rights reserved.

引用

收藏

页码：713 / 717

页数：5

相关论文

共 9 条

[1] Iron gettering mechanisms in silicon [J].

Benton, JL ;

Stolk, PA ;

Eaglesham, DJ ;

Jacobson, DC ;

Cheng, JY ;

Poate, JM ;

Ha, NT ;

Haynes, TE ;

Myers, SM .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) :3275-3284

[2] Evolution from point to extended defects in ion implanted silicon [J].

Benton, JL ;

Libertino, S ;

Kringhoj, P ;

Eaglesham, DJ ;

Poate, JM ;

Coffa, S .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :120-125

[3] Implantation temperature dependence of He bubble formation in Si [J].

da Silva, DL ;

Fichtner, PFP ;

Behar, M ;

Peeva, A ;

Koegler, R ;

Skorupa, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 190 :756-760

[4] The effects of implantation temperature on He bubble formation in silicon [J].

da Silva, DL ;

Fichtner, PFP ;

Peeva, A ;

Behar, M ;

Koegler, R ;

Skorupa, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 :335-339

[5] Copper gettering at half the projected ion range induced by low-energy channeling He implantation into silicon [J].

Fichtner, PFP ;

Behar, M ;

Kaschny, JR ;

Peeva, A ;

Koegler, R ;

Skorupa, W .

APPLIED PHYSICS LETTERS, 2000, 77 (07) :972-974

[6] Nucleation and growth of platelet bubble structures in He implanted silicon [J].

Fichtner, PFP ;

Kaschny, JR ;

Kling, A ;

Trinkaus, H ;

Yankov, RA ;

Mucklich, A ;

Skorupa, W ;

Zawislak, FC ;

Amaral, L ;

da Silva, MF ;

Soares, JC .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 136 :460-464

[7] Dislocations induced by bubble formation in high energy He implantation in silicon [J].

Oliviero, E ;

Beaufort, MF ;

Barbot, JF .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (10) :5332-5338

[8] Gettering of copper in silicon at half of the projected ion range induced by helium implantation [J].

Peeva, A ;

Fichtner, PFP ;

da Silva, DL ;

Behar, M ;

Koegler, R ;

Skorupa, W .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (01) :69-77

[9] AN ATOMIC MODEL OF ELECTRON-IRRADIATION-INDUCED DEFECTS ON (113) IN SI [J].

TAKEDA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A) :L639-L642