Atomic-layer chemical-vapor-deposition of silicon-nitride

被引：63

作者：

Morishita, S

Sugahara, S

Matsumura, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Tokyo 152, 2-12-1 O-okayama, Meguro-ku

来源：

APPLIED SURFACE SCIENCE | 1997年 / 112卷

关键词：

D O I：

10.1016/S0169-4332(96)01006-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Silicon-nitride films have been successfully deposited in a layer-by-layer manner by alternating exposures to dichlorosilane and hydrazine. The saturated deposition rate was about 2.3 Angstrom/cycle, very near to 1 monolayer/cycle, in a temperature range between 525 degrees C and 650 degrees C. The layer-by-layer manner deposition was confirmed to start from a very early stage of its deposition cycle. Deposited film characteristics including electron tunnelling are also presented.

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页码：198 / 204

页数：7

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