ATOMIC-LAYER CHEMICAL-VAPOR-DEPOSITION OF SIO2 BY CYCLIC EXPOSURES OF CH3OSI(NCO)(3) AND H2O2

被引：26

作者：

MORISHITA, S ^{[1
]}

UCHIDA, Y ^{[1
]}

MATSUMURA, M ^{[1
]}

机构：

[1] NISHI TOKYO UNIV,DEPT ELECTR & INFORMAT SCI,UENOHARA,YAMANASHI 40901,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 10期

关键词：

SIO2; ATOMIC-LAYER CHEMICAL-VAPOR-DEPOSITION; CH3OSI(NCO)(3); H2O2;

D O I：

10.1143/JJAP.34.5738

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic-layer chemical-vapor-deposition (AL-CVD) of SiO2 has been achieved by cyclic exposures of CH3OSi(NCO)(3) and H2O2 at room temperature. The deposition rate was saturated at about 2.0 Angstrom/cycle i.e., equal to the ideal quasi-monolayer/cycle. The surface roughness after 100 deposition cycles was found to be less than +/-10 Angstrom by atomic force microscopy (AFM). Film properties were also evaluated by auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS), and Fourier transform IR (FT-IR) spectroscopy.

引用

页码：5738 / 5742

页数：5

共 12 条

[1] QUASI-MONOLAYER DEPOSITION OF SILICON DIOXIDE [J].

GASSER, W ;

UCHIDA, Y ;

MATSUMURA, M .

THIN SOLID FILMS, 1994, 250 (1-2) :213-218

[2] ATOMIC LAYER EPITAXY [J].

GOODMAN, CHL ;

PESSA, MV .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (03) :R65-R81

[3]

HELMS CR, 1988, SI SIO2 SYSTEM, P77

[4] A NOVEL ATOMIC LAYER EPITAXY METHOD OF SILICON [J].

IMAI, S ;

TAKAGI, S ;

SUGIURA, O ;

MATSUMURA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (12B) :3646-3651

[5] ATOMIC LAYER EPITAXY OF SI USING ATOMIC H [J].

IMAI, S ;

IIZUKA, T ;

SUGIURA, O ;

MATSUMURA, M .

THIN SOLID FILMS, 1993, 225 (1-2) :168-172

[6] NEW SUBSTANCES FOR ATOMIC-LAYER DEPOSITION OF SILICON DIOXIDE [J].

MORISHITA, S ;

GASSER, W ;

USAMI, K ;

MATSUMURA, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 187 :66-69

[7] ATOMIC LAYER EPITAXY OF GERMANIUM [J].

SUGAHARA, S ;

KITAMURA, T ;

IMAI, S ;

MATSUMURA, M .

APPLIED SURFACE SCIENCE, 1994, 82-3 (1-4) :380-386

[8]

Suntola T., 1989, Material Science Reports, V4, P261, DOI 10.1016/S0920-2307(89)80006-4

[9]

Suntola T, 1977, U.S. Patent, Patent No. [4058430, 4,058,430]

[10]

UCHIDA Y, UNPUB 1995 INT C SOL

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