Preparation and characterization of Ba(Zr,Ti)O-3 thin films by sputtering

The potential use of Ba(Zr,Ti)O-3 (BZT) thin films as a decoupling capacitor for a multi chip module (MCM) has been examined. The crystal structure of BZT thin films on Pt(100)/MgO(100) and MgO(100) deposited from Ba(Zr0.2Ti0.8)O-3 powder targets had a perovskite structure and were strongly (100) oriented. The crystal structure of BZT thin films on Pt(111) was different from that of Pt(100)/MgO(100) and MgO(100) substrates. The degree of (100) orientation on Pt(111)/SiO2/Si increased with increasing deposition temperature. A maximum dielectric constant of 150 was obtained at 600 degrees C deposition. The loss tangent, leakage current and temperature dependence of capacitance of these BZT thin films were very small.