Plasma and ablation dynamics in ultrafast laser processing of crystalline silicon

被引：153

作者：

Choi, TY ^{[1
]}

Grigoropoulos, CP ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 09期

关键词：

D O I：

10.1063/1.1510565

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mechanisms of ultrafast (femtosecond) laser-induced ablation on crystalline silicon are investigated by time-resolved pump-and-probe microscopy in normal imaging and shadowgraph arrangements. A one-dimensional model of the energy transport is utilized to predict the carrier temperature and lattice temperature as well as the electron and vapor flux emitted from the surface. The temporal delay between the pump and probe pulses is set by a precision translation stage up to about 500 ps and then extended to the nanosecond regime by an optical fiber assembly. The ejection of material is observed at several picoseconds to tens of nanoseconds after the main (pump) pulse by high-resolution, ultrafast shadowgraphs. (C) 2002 American Institute of Physics.

引用

页码：4918 / 4925

页数：8

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