Photon energy dependence of contrast in photoelectron emission microscopy of Si devices

被引：11

作者：

Ballarotto, VW ^{[2
]}

Siegrist, K

Phaneuf, RJ

Williams, ED

Yang, WC

Nemanich, RJ

机构：

[1] Lab Phys Sci, College Pk, MD 20740 USA

[2] Univ Maryland, College Pk, MD 20740 USA

[3] N Carolina State Univ, Dept Phys, Raleigh, NC 27695 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 22期

关键词：

D O I：

10.1063/1.1376151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the variation in doping-induced contrast with photon energy in photoelectron emission microscopy images of Si pn devices using a free-electron laser as a tunable monochromatic light source. Photoyield is observed from p-doped regions of the devices for photon energies as low as 4.5 eV. Band tailing is the dominant effect contributing to the low energy photoyield from the heavily doped p regions. The low intensity tail from the n regions, however, may be from surface states. (C) 2001 American Institute of Physics.

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页码：3547 / 3549

页数：3

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