ENERGY-GAP REDUCTION IN HEAVILY DOPED SILICON - CAUSES AND CONSEQUENCES

被引：46

作者：

PANTELIDES, ST

SELLONI, A

CAR, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 1-2期

关键词：

D O I：

10.1016/0038-1101(85)90205-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：17 / 24

页数：8

共 22 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES [J].

ABRAM, RA ;

REES, GJ ;

WILSON, BLH .

ADVANCES IN PHYSICS, 1978, 27 (06) :799-892

[2] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE SI [J].

BALKANSKI, M ;

AZIZA, A ;

AMZALLAG, E .

PHYSICA STATUS SOLIDI, 1969, 31 (01) :323-+

[3] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS [J].

BERGGREN, KF ;

SERNELIUS, BE .

PHYSICAL REVIEW B, 1981, 24 (04) :1971-1986

[4] INTERVALLEY MIXING VERSUS DISORDER IN HEAVILY DOPED N-TYPE SILICON [J].

BERGGREN, KF ;

SERNELIUS, B .

PHYSICAL REVIEW B, 1984, 29 (10) :5575-5580

[5] ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].

BURSTEIN, E .

PHYSICAL REVIEW, 1954, 93 (03) :632-633

[6] COMPARISON OF BAND-GAP SHRINKAGE OBSERVED IN LUMINESCENCE FROM N+-SI WITH THAT FROM TRANSPORT AND OPTICAL-ABSORPTION MEASUREMENTS [J].

DUMKE, WP .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :196-198

[7] INFRARED ABSORPTION IN HEAVILY DOPED N-TYPE GERMANIUM [J].

HAAS, C .

PHYSICAL REVIEW, 1962, 125 (06) :1965-&

[8] EFFECT OF ELECTRON INTERACTION ON BAND-GAP OF EXTRINSIC SEMICONDUCTORS [J].

INKSON, JC .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (07) :1177-1183

[9] THOMAS-FERMI APPROACH TO IMPURE SEMICONDUCTOR BAND STRUCTURE [J].

KANE, EO .

PHYSICAL REVIEW, 1963, 131 (01) :79-&

[10] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS [J].

KAUFFMAN, WL ;

BERGH, AA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) :732-+

← 1 2 3 →