ENERGY-GAP REDUCTION IN HEAVILY DOPED SILICON - CAUSES AND CONSEQUENCES

被引：46

作者：

PANTELIDES, ST

SELLONI, A

CAR, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 1-2期

关键词：

D O I：

10.1016/0038-1101(85)90205-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：17 / 24

页数：8

共 22 条

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