PEEM imaging of dopant contrast in Si(001)

被引：14

作者：

Ballarotto, VW

Siegrist, K

Phaneuf, RJ

Williams, ED ^{[1
]}

Mogren, S

机构：

[1] Lab Phys Sci, College Pk, MD 20740 USA

[2] Univ Maryland, College Pk, MD 20740 USA

[3] Microelect Res Lab, Columbia, MD 20745 USA

来源：

SURFACE SCIENCE | 2000年 / 461卷 / 1-3期

关键词：

electron microscopy; photoelectron emission; photoemission (total yield); semi-empirical models and model calculations; silicon; surface electronic phenomena (work function; surface potential; surface states; etc.);

D O I：

10.1016/S0039-6028(00)00619-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on a quantitative investigation of doping-induced contrast in photoelectron emission microscopy images of Si devices. The calibration samples were fabricated using standard photolithography and focused ion beam writing, and consisted of p-type (B) stripes of different nominal dopant concentrations (10(18)-10(20) cm(-3)) and line separations, written on n-type (N-d = 10(14) cm(-3)) Si(001) substrates. Using a near-threshold light source, we find that the signal intensity increases monotonically with B concentration over the measured range of doping. The measured intensity ratios are in good agreement with a calculation based on photoemission from the valence band. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：L570 / L574

页数：5

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