Water-repellency of a-C:H films deposited by rf plasma-enhanced CVD

被引：16

作者：

Kim, JD ^{[1
]}

Sugimura, H ^{[1
]}

Takai, O ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Nagoya, Aichi 4648603, Japan

来源：

VACUUM | 2002年 / 66卷 / 3-4期

基金：

日本学术振兴会;

关键词：

D O I：

10.1016/S0042-207X(02)00158-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Hydrogenated amorphous carbon (a-C:H) films with high water-repellency were deposited on Si and glass substrates by rf (13.56 MHz) plasma-enhanced chemical vapor deposition using CH4 and HZ as raw materials. The films had a contact angle for a water drop of 94 and showed no dependence on the rf power and substrate. Thus, these films show high water-repellency due to the good hydrophobic property of the CH groups on the surfaces. The bonding structure of the films was investigated by Fourier transform infrared. The film deposited at rf 150W showed a maximum hardness of 5.4 GPa and the optical transparency was high. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：379 / 383

页数：5

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