Simultaneous quantification of strain and defects in high-power diode laser devices

被引：35

作者：

Tomm, JW

Gerhardt, A

Elsaesser, T

Lorenzen, D

Hennig, P

机构：

[1] Max Born Inst Nichtlineare Opt & Kurzzeitspektros, D-12489 Berlin, Germany

[2] Jenoptik Laserdiode GmbH, D-07745 Jena, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 17期

关键词：

D O I：

10.1063/1.1514390

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photocurrent spectroscopy is applied for an analysis of both packaging-induced strain and strain-induced defect creation in InAlGaAs/GaAs high-power diode laser arrays. Strain profiles across 50 W diode lasers processed by different packaging procedures are measured and compared to model calculations. We demonstrate that packaging-induced strain giving rise to spectral shifts of the laser transition correlates with packaging-induced defects in the waveguide that are quantified via a sub-band gap absorption band. Packaging on a Cu-diamond multilayer heat spreader appears as optimized solution simultaneously minimizing strain and defect creation. (C) 2002 American Institute of Physics.

引用

页码：3269 / 3271

页数：3

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