Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

被引：51

作者：

Biegalski, M. D. ^{[1
]}

Fong, D. D. ^{[2
]}

Eastman, J. A. ^{[2
]}

Fuoss, P. H. ^{[2
]}

Streiffer, S. K. ^{[3
]}

Heeg, T. ^{[4
,5
]}

Schubert, J. ^{[4
,5
]}

Tian, W. ^{[6
]}

Nelson, C. T. ^{[6
]}

Pan, X. Q. ^{[6
]}

Hawley, M. E. ^{[7
]}

Bernhagen, M. ^{[8
]}

Reiche, P. ^{[8
]}

Uecker, R. ^{[8
]}

Trolier-McKinstry, S. ^{[1
]}

Schlom, D. G. ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[2] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[4] Forschungszentrum Julich, Inst Bio & Nanosyst IT IBN1, D-52425 Julich, Germany

[5] Forschungszentrum Julich, Ctr Nanoelect Syst Informat Technol Cni, D-52425 Julich, Germany

[6] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48019 USA

[7] Los Alamos Natl Lab, Mat Sci & Technol Div MST 8, Los Alamos, NM 87545 USA

[8] Inst Crystal Growth, D-12489 Berlin, Adlershof, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.3037216

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained epitaxial SrTiO3 films were grown on orthorhombic (101) DyScO3 substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018 degrees). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700 degrees C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO3 films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films. (c) 2008 American Institute of Physics. [DOI: 10.1063/1.3037216]

引用

页数：11

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