Modification of ferroelectricity in heteroepitaxial (Ba,Sr)TiO3 films for non-volatile memory applications

被引：34

作者：

Abe, K ^{[1
]}

Yanase, N ^{[1
]}

Sano, K ^{[1
]}

Izuha, M ^{[1
]}

Fukushima, N ^{[1
]}

Kawakubo, T ^{[1
]}

机构：

[1] Toshiba Corp, R&D Ctr, Mat & Devices Res Lab, Saiwai Ku, Kawasaki, Kanagawa 2108582, Japan

来源：

INTEGRATED FERROELECTRICS | 1998年 / 21卷 / 1-4期

关键词：

heteroepitaxial growth; Curie temperature; lattice misfit;

D O I：

10.1080/10584589808202063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Modification of ferroelectricity in heteroepitaxial BaxSr1-xTiO3(BST) films by making use of lattice misfit was investigated. Theoretical calculation suggested that application of two-dimensional compressive stress of 3 GPa to the ferroelectric crystal would result in Curie temperature increase by 270 degrees C. This theoretical prediction was experimentally confirmed. Heteroepitaxial Ba0.6Sr0.4TiO3 films grown on SrRuO3/SrTiO3 substrates exhibited ferroelectric hysteresis at 200 degrees C, even though the inherent Curie temperature is known to be 0 degrees C. The possibility of heteroepitaxial BST films for ferroelectric non-volatile memory applications and their advantages were pointed out.

引用

页码：197 / 206

页数：10

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