Epitaxial growth of Ti1-xAlxN buffer layer for a ferroelectric (Ba, Sr)TiO3 capacitor on Si substrate

被引:13
作者
Yanase, N [1 ]
Sano, K [1 ]
Abe, K [1 ]
Kawakubo, T [1 ]
机构
[1] Toshiba Corp, R&D Ctr, Mat & Devices Res Labs, Saiwai Ku, Kanagawa 210, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1998年 / 37卷 / 2A期
关键词
titanium aluminum nitride; heteroepitaxy; low-energy ion beam deposition; resistivity; barium strontium titanate;
D O I
10.1143/JJAP.37.L151
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial titanium aluminum nitride, Ti1-xAlxN(100) (0 less than or equal to x < 0.5), was grown on Si(100) substrates at 600 degrees C by low-energy reactive ion beam deposition using N-2(+) ion beam irradiation with 100eV energy and Ti and Al simultaneous evaporation. The epitaxial relationship was confirmed to be Ti1-xAlxN(100)parallel to Si(100), Ti1-xAlxN[110]parallel to Si(110) by X-ray diffraction XRD) and in situ reflection high-energy electron diffraction (RHEED). Although the electrical resistivity increased exponentially with x, the values remained on the order of 10(-4) Omega.cm. Using the Ti1-xAlxN buffer layer, we have successfully fabricated a capacitor with an epitaxial (Ba, Sr)TiO3 film on a Si substrate.
引用
收藏
页码:L151 / L153
页数:3
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