Growth and mechanical anisotropy of TiN thin films

We have grown TiN thin films on Si(100) and Si(111) substrates by ultra-high vacuum d.c. magnetron reactive sputtering. TiN grows on Si(111) epitaxially while almost completely textured growth of TiN on Si(100) is achieved. Elastic constants of the TIN film are determined by measuring the longitudinal sound velocity with a time-resolved transient piezoreflectance technique. ?he mechanical response of these crystallographically anisotropic TiN/Si film/substrate assemblies was further studied by sub-micron depth-sensing indentation. Consistent with the observed film orientations, we find an anisotropic mechanical response. Measured indentation modulus and hardness as a function of indentation depth are consistent with existing theories.