Growth of ferroelectric oxide films on n-GaN/c-sapphire structures

被引：28

作者：

Fuflyigin, V ^{[1
]}

Osinsky, A ^{[1
]}

Wang, F ^{[1
]}

Vakhutinsky, P ^{[1
]}

Norris, P ^{[1
]}

机构：

[1] NZ Appl Technol, Woburn, MA 01801 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 12期

关键词：

D O I：

10.1063/1.126112

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality (Pb, La)(Ti, Zr)O-3 films were grown on n-GaN. The film thickness ranged from 0.5 to 5 mu m. The material was prepared by a chemical solution method with compositions of 8/65/35 and 0/52/48. The films grown on GaN buffered with a thin layer of indium in oxide were highly textured and exhibited excellent ferroelectric properties with P-r=20-26 mu C/cm(2). A large field-induced birefringence of 0.025 was measured in the film with a composition of 8/65/35 under a field strength of 2x10(5) V/cm. (C) 2000 American Institute of Physics. [S0003-6951(00)02512-2].

引用

页码：1612 / 1614

页数：3

共 15 条

[1] FORMATION OF FERROELECTRIC BAMGF4 FILMS ON GAAS SUBSTRATES [J].