Laterally oxidized GaInP/AlGaInP quantum well visible laser diodes

被引：1

作者：

Floyd, PD

Sun, D

Treat, DW

机构：

[1] Electronic Materials Laboratory, Xerox Palo Alto Research Center, Palo Alto

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.366091

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High efficiency, low threshold Visible AlGaInP/GaInP laser diodes using a buried AlAs native oxide for carrier and optical confinement are described. The lasers incorporate a thin AlAs layer in the upper cladding region, which when laterally wet oxidized, forms a narrow aperture. The lasers exhibited modest performance under continuous wave (cw) operation. Low temperature (400 degrees C) post-fabrication annealing was shown to dramatically improve the device characteristics. The lasers operate with room temperature cw threshold currents of 20 mA with external differential quantum efficiencies of 27% per facet (0.25 W/A per facet) for an uncoated 625-mu m-long, 3.5-mu m-wide device. (C) 1997 American Institute of Physics.

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页码：2710 / 2712

页数：3

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